NTGD4167CT1G
onsemi

onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
$0.64
Available to order
Reference Price (USD)
3,000+
$0.15976
6,000+
$0.14945
15,000+
$0.13914
30,000+
$0.13193
75,000+
$0.13118
Exquisite packaging
Discount
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Elevate your electronics with the NTGD4167CT1G from onsemi, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the NTGD4167CT1G provides the reliability and efficiency you need. onsemi's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.6A, 1.9A
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP