NTGS3447PT1G
onsemi
onsemi
MOSFET P-CH 12V 3.4A 6TSOP
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTGS3447PT1G from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NTGS3447PT1G ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IRFHS8342TRPBF
Vishay Siliconix
SIHP11N80E-BE3
STMicroelectronics
STE88N65M5
Microchip Technology
APT12031JFLL
Vishay Siliconix
SI3458BDV-T1-E3
Infineon Technologies
AUIRFS3306TRL
IXYS
IXFX360N15T2
Vishay Siliconix
SIHB125N60EF-GE3
Infineon Technologies
IPS50R520CP
Infineon Technologies