NTMD6P02R2G
onsemi
onsemi
MOSFET 2P-CH 20V 4.8A 8SOIC
$0.97
Available to order
Reference Price (USD)
2,500+
$0.38608
5,000+
$0.36677
12,500+
$0.35299
25,000+
$0.35098
Exquisite packaging
Discount
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Choose the NTMD6P02R2G from onsemi for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the NTMD6P02R2G stands out for its reliability and efficiency. onsemi's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.8A
- Rds On (Max) @ Id, Vgs: 33mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
- Power - Max: 750mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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