NTMFD4C86NT3G
onsemi
onsemi
MOSFET 2N-CH 30V 11.3/18.1A 8DFN
$2.37
Available to order
Reference Price (USD)
1+
$2.37000
500+
$2.3463
1000+
$2.3226
1500+
$2.2989
2000+
$2.2752
2500+
$2.2515
Exquisite packaging
Discount
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Discover the high-performance NTMFD4C86NT3G from onsemi, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the NTMFD4C86NT3G delivers unmatched performance. Trust onsemi's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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