NTMFS4C09NAT1G
onsemi
onsemi
MOSFET N-CH 30V 9A/52A 5DFN
$1.11
Available to order
Reference Price (USD)
1,500+
$0.26236
Exquisite packaging
Discount
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Meet the NTMFS4C09NAT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTMFS4C09NAT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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