NTMFS5H414NLT1G
onsemi
onsemi
MOSFET N-CH 40V 35A/210A 5DFN
$3.05
Available to order
Reference Price (USD)
1,500+
$1.68445
3,000+
$1.60023
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NTMFS5H414NLT1G single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTMFS5H414NLT1G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
onsemi
NVMFS6H801NT3G
Sanken
FKV575
Rectron USA
RM8N650T2
onsemi
NTD4804N-35G
Infineon Technologies
IRFZ44VZPBF
STMicroelectronics
STP140N6F7
Vishay Siliconix
SIJ462DP-T1-GE3
Infineon Technologies
IPD048N06L3GBTMA1
IXYS
IXFK180N15P
Infineon Technologies