NTMS10P02R2G
onsemi
onsemi
MOSFET P-CH 20V 8.8A 8SOIC
$1.81
Available to order
Reference Price (USD)
2,500+
$0.71579
5,000+
$0.68000
12,500+
$0.65444
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTMS10P02R2G from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NTMS10P02R2G ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Microchip Technology
APT1204R7BFLLG
Micro Commercial Co
SI2310B-TP
Diodes Incorporated
ZXMP10A17GTA
Fairchild Semiconductor
FDZ294N
Fairchild Semiconductor
ISL9N306AP3
Texas Instruments
CSD19532Q5BT
Vishay Siliconix
SI3438DV-T1-E3
Nexperia USA Inc.
BUK7M6R0-40HX
IXYS
IXTA4N80P
Panjit International Inc.