NTMS4916NR2G
onsemi
onsemi
MOSFET N-CH 30V 7.8A 8SOIC
$0.82
Available to order
Reference Price (USD)
2,500+
$0.36685
5,000+
$0.34155
12,500+
$0.32890
25,000+
$0.32200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTMS4916NR2G from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NTMS4916NR2G offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1376 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 890mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Nexperia USA Inc.
BUK9M12-60EX
Microchip Technology
DN3765K4-G
Alpha & Omega Semiconductor Inc.
AOD600A70
onsemi
RFD14N05LSM9A
IXYS
IXFX420N10T
Fairchild Semiconductor
FQPF6N50
IXYS
IXFH40N50Q
Renesas Electronics America Inc
UPA2720GR-E1-A
STMicroelectronics
STD95NH02LT4
Rohm Semiconductor