NTZS3151PT1G
onsemi
onsemi
MOSFET P-CH 20V 860MA SOT563
$0.41
Available to order
Reference Price (USD)
4,000+
$0.11903
8,000+
$0.11270
12,000+
$0.10321
28,000+
$0.09689
100,000+
$0.08614
Exquisite packaging
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Discover the NTZS3151PT1G from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NTZS3151PT1G ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 170mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563
- Package / Case: SOT-563, SOT-666
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