NVD4810NT4G
onsemi
onsemi
NVD4810 - SINGLE N-CHANNEL POWER
$0.32
Available to order
Reference Price (USD)
2,500+
$0.33016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NVD4810NT4G from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVD4810NT4G offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVMFS5C628NT1G
Alpha & Omega Semiconductor Inc.
AOTF13N50
STMicroelectronics
STL12N60M6
Vishay Siliconix
SI4456DY-T1-E3
Nexperia USA Inc.
PSMNR90-40YLHX
STMicroelectronics
STW68N60M6
NXP USA Inc.
BSH207,135
Vishay Siliconix
SUD23N06-31-GE3
onsemi
FDS6670AS
Toshiba Semiconductor and Storage