NVD5C688NLT4G
onsemi
onsemi
MOSFET N-CHANNEL 60V 17A DPAK
$1.65
Available to order
Reference Price (USD)
2,500+
$0.31693
5,000+
$0.29507
12,500+
$0.28414
25,000+
$0.27818
Exquisite packaging
Discount
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The NVD5C688NLT4G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVD5C688NLT4G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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