NVMFS5113PLT1G
onsemi
onsemi
MOSFET P-CH 60V 10A/64A 5DFN
$2.98
Available to order
Reference Price (USD)
1,500+
$1.11315
3,000+
$1.03638
7,500+
$0.99800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the NVMFS5113PLT1G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NVMFS5113PLT1G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Vishay Siliconix
SIHG21N65EF-GE3
Fairchild Semiconductor
FQB9N25CTM
Nexperia USA Inc.
PSMN2R6-30YLC,115
Fairchild Semiconductor
HUF76633S3ST
Diodes Incorporated
ZXMN4A06GQTA
Vishay Siliconix
SQJA62EP-T1_GE3
Fairchild Semiconductor
FQU8N25TU
Rohm Semiconductor
RCX330N25
Infineon Technologies
IPZA60R180P7XKSA1
Vishay Siliconix