NVMFS6D1N08HT1G
onsemi
onsemi
T8 80V
$1.56
Available to order
Reference Price (USD)
1,500+
$0.70933
3,000+
$0.66205
7,500+
$0.62894
10,500+
$0.60530
Exquisite packaging
Discount
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Upgrade your designs with the NVMFS6D1N08HT1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVMFS6D1N08HT1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 6 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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