NVMFS6H836NLT1G
onsemi
onsemi
MOSFET N-CH 80V 16A/77A 5DFN
$0.64
Available to order
Reference Price (USD)
1+
$0.63756
500+
$0.6311844
1000+
$0.6248088
1500+
$0.6184332
2000+
$0.6120576
2500+
$0.605682
Exquisite packaging
Discount
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Upgrade your designs with the NVMFS6H836NLT1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NVMFS6H836NLT1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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