NVMFS6H836NT1G
onsemi
onsemi
MOSFET N-CH 80V 15A/74A 5DFN
$1.82
Available to order
Reference Price (USD)
1+
$1.82000
500+
$1.8018
1000+
$1.7836
1500+
$1.7654
2000+
$1.7472
2500+
$1.729
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the NVMFS6H836NT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVMFS6H836NT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Diodes Incorporated
DMP3028LFDE-7
Vishay Siliconix
SI4168DY-T1-GE3
Vishay Siliconix
SI4124DY-T1-GE3
Infineon Technologies
IPB47N10S33ATMA1
Vishay Siliconix
SI4630DY-T1-E3
STMicroelectronics
STWA88N65M5
Alpha & Omega Semiconductor Inc.
AOTF600A70L
IXYS
IXFH50N60P3
onsemi
NTB6N60
onsemi