NVMFWS020N06CT1G
onsemi
onsemi
MOSFET N-CH 60V 9A/28A 5DFN
$0.73
Available to order
Reference Price (USD)
1+
$0.73359
500+
$0.7262541
1000+
$0.7189182
1500+
$0.7115823
2000+
$0.7042464
2500+
$0.6969105
Exquisite packaging
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Meet the NVMFWS020N06CT1G by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NVMFWS020N06CT1G stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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