NVMJS1D3N04CTWG
onsemi
onsemi
MOSFET N-CH 40V 41A/235A 8LFPAK
$3.78
Available to order
Reference Price (USD)
3,000+
$1.06920
6,000+
$1.02960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NVMJS1D3N04CTWG single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVMJS1D3N04CTWG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
Related Products
Taiwan Semiconductor Corporation
TSM70N900CP ROG
Renesas Electronics America Inc
2SK4201-S19-AY
Infineon Technologies
IRFH7440TRPBF
Infineon Technologies
IPD70N12S3L12ATMA1
Vishay Siliconix
SQP120N06-3M5L_GE3
STMicroelectronics
STP45N10F7
Infineon Technologies
IPP100N08N3GXKSA1
Vishay Siliconix
SIRA58DP-T1-GE3
Infineon Technologies
BSC0500NSIATMA1
Diodes Incorporated