NVMYS021N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 9.8A/27A 4LFPAK
$1.84
Available to order
Reference Price (USD)
1+
$1.84000
500+
$1.8216
1000+
$1.8032
1500+
$1.7848
2000+
$1.7664
2500+
$1.748
Exquisite packaging
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The NVMYS021N06CLTWG by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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