NVMYS025N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 8.5A/21A 4LFPAK
$1.73
Available to order
Reference Price (USD)
1+
$1.73000
500+
$1.7127
1000+
$1.6954
1500+
$1.6781
2000+
$1.6608
2500+
$1.6435
Exquisite packaging
Discount
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The NVMYS025N06CLTWG from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NVMYS025N06CLTWG offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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