NVMYS4D6N04CLTWG
onsemi
onsemi
MOSFET N-CH 40V 21A/78A LFPAK4
$0.88
Available to order
Reference Price (USD)
1+
$0.87556
500+
$0.8668044
1000+
$0.8580488
1500+
$0.8492932
2000+
$0.8405376
2500+
$0.831782
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NVMYS4D6N04CLTWG single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVMYS4D6N04CLTWG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
NXP USA Inc.
PMPB16XN,115
Rectron USA
RM120N85T2
Infineon Technologies
IRL7833PBF
Vishay Siliconix
SUM70042E-GE3
Nexperia USA Inc.
PSMN2R8-80BS,118
Microchip Technology
APT8065SVRG
IXYS
IXTT50P10
STMicroelectronics
STH320N4F6-6
Rohm Semiconductor
RD3S100CNTL1
Infineon Technologies