NX1029XH
Nexperia USA Inc.
Nexperia USA Inc.
NX1029X/SOT666/SOT6
$0.16
Available to order
Reference Price (USD)
1+
$0.15754
500+
$0.1559646
1000+
$0.1543892
1500+
$0.1528138
2000+
$0.1512384
2500+
$0.149663
Exquisite packaging
Discount
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Discover the high-performance NX1029XH from Nexperia USA Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the NX1029XH delivers unmatched performance. Trust Nexperia USA Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), 170mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 600pC @ 4.5V, 350pC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 36pF @ 25V
- Power - Max: 330mW (Ta), 1.09W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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