NX3008PBK,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 230MA TO236AB
$0.31
Available to order
Reference Price (USD)
3,000+
$0.06366
6,000+
$0.05611
15,000+
$0.04855
30,000+
$0.04603
75,000+
$0.04351
150,000+
$0.03847
Exquisite packaging
Discount
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The NX3008PBK,215 by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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