NX3L2G384GM,125
NXP Semiconductors
NXP Semiconductors
NX3L2G384 - DUAL LOW-OHMIC SINGL
$0.37
Available to order
Reference Price (USD)
4,000+
$0.29290
8,000+
$0.27270
12,000+
$0.26866
Exquisite packaging
Discount
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Optimize your signal path design with NXP Semiconductors's NX3L2G384GM,125, a flagship product in our Analog Switches and Multiplexers category. This IC combines low distortion (<0.01% THD) with high off-isolation (>80dB at 1MHz), making it ideal for high-fidelity applications. The breakthrough architecture enables simultaneous sampling across multiple channels while maintaining signal purity. Key implementations include: industrial process control interfaces, semiconductor test handlers, MRI machine front-ends, and 5G base station signal conditioning. The NX3L2G384GM,125 meets stringent requirements for military-grade communications equipment and satellite payload management systems, offering radiation-hardened versions upon request.
Specifications
- Product Status: Obsolete
- Switch Circuit: SPST - NO
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 2
- On-State Resistance (Max): 900mOhm
- Channel-to-Channel Matching (ΔRon): 20mOhm
- Voltage - Supply, Single (V+): 1.4V ~ 4.3V
- Voltage - Supply, Dual (V±): 1.4V ~ 4.3V
- Switch Time (Ton, Toff) (Max): 24ns, 7ns
- -3db Bandwidth: 60MHz
- Charge Injection: 6pC
- Channel Capacitance (CS(off), CD(off)): 35pF
- Current - Leakage (IS(off)) (Max): 10nA
- Crosstalk: -90dB @ 100kHz
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-XFQFN Exposed Pad
- Supplier Device Package: 8-XQFN (1.6x1.6)
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