NXH020F120MNF1PG
onsemi
onsemi
PIM F1 SIC FULL BRIDGE 1200V 20M
$147.13
Available to order
Reference Price (USD)
1+
$147.13143
500+
$145.6601157
1000+
$144.1888014
1500+
$142.7174871
2000+
$141.2461728
2500+
$139.7748585
Exquisite packaging
Discount
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Elevate your electronics with the NXH020F120MNF1PG from onsemi, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the NXH020F120MNF1PG provides the reliability and efficiency you need. onsemi's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
- Power - Max: 119W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (33.8x42.5)
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