NXH80T120L3Q0S3G
onsemi
onsemi
PIM GENERATION3 Q0PACK 1200V, 80
$54.25
Available to order
Reference Price (USD)
1+
$54.25000
500+
$53.7075
1000+
$53.165
1500+
$52.6225
2000+
$52.08
2500+
$51.5375
Exquisite packaging
Discount
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The NXH80T120L3Q0S3G from onsemi exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the NXH80T120L3Q0S3G in megawatt-level wind turbine converters. With onsemi's proven track record, the NXH80T120L3Q0S3G represents the future of power semiconductor modules.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 188 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 18.15 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 20-PIM/Q0PACK (55x32.5)
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