P3D12010G2
PN Junction Semiconductor
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 10A TO263-2
$6.54
Available to order
Reference Price (USD)
1+
$6.54000
500+
$6.4746
1000+
$6.4092
1500+
$6.3438
2000+
$6.2784
2500+
$6.213
Exquisite packaging
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Discover the P3D12010G2 single rectifier diode by PN Junction Semiconductor, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The P3D12010G2 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose PN Junction Semiconductor's P3D12010G2 for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: TO-263-2
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C (TJ)
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