P3M06025K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 97A TO247-4
$15.90
Available to order
Reference Price (USD)
1+
$15.90000
500+
$15.741
1000+
$15.582
1500+
$15.423
2000+
$15.264
2500+
$15.105
Exquisite packaging
Discount
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Upgrade your designs with the P3M06025K4 by PN Junction Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the P3M06025K4 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 97A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 326W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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