P3M06120K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 27A TO-247-4
$9.05
Available to order
Reference Price (USD)
1+
$9.05000
500+
$8.9595
1000+
$8.869
1500+
$8.7785
2000+
$8.688
2500+
$8.5975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The P3M06120K4 by PN Junction Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the P3M06120K4 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 131W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Comchip Technology
A2N7002HW-HF
Taiwan Semiconductor Corporation
TSM1NB60CH C5G
Vishay Siliconix
SI1411DH-T1-GE3
NXP USA Inc.
PH2230DLS115
Vishay Siliconix
SQJ415EP-T1_GE3
Microchip Technology
TN2106K1-G
Panasonic Electronic Components
FK8V03040L
Vishay Siliconix
SIHP23N60E-GE3
Infineon Technologies
IRF2907ZSTRLPBF
Micro Commercial Co