P3M06120T3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 29A TO-220-3
$9.05
Available to order
Reference Price (USD)
1+
$9.05000
500+
$8.9595
1000+
$8.869
1500+
$8.7785
2000+
$8.688
2500+
$8.5975
Exquisite packaging
Discount
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Upgrade your designs with the P3M06120T3 by PN Junction Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the P3M06120T3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 29A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 153W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-2L
- Package / Case: TO-220-2
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