P3M06300D5
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 9A DFN5*6
$4.98
Available to order
Reference Price (USD)
1+
$4.98000
500+
$4.9302
1000+
$4.8804
1500+
$4.8306
2000+
$4.7808
2500+
$4.731
Exquisite packaging
Discount
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The P3M06300D5 by PN Junction Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the P3M06300D5 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4.5A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 26W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5*6
- Package / Case: DFN5*6
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