P3M12025K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 112A TO-247-4
$28.74
Available to order
Reference Price (USD)
1+
$28.74000
500+
$28.4526
1000+
$28.1652
1500+
$27.8778
2000+
$27.5904
2500+
$27.303
Exquisite packaging
Discount
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The P3M12025K4 by PN Junction Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose PN Junction Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 112A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 577W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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