P3M12040G7
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 69A TO-263-7
$20.98
Available to order
Reference Price (USD)
1+
$20.98000
500+
$20.7702
1000+
$20.5604
1500+
$20.3506
2000+
$20.1408
2500+
$19.931
Exquisite packaging
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The P3M12040G7 by PN Junction Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose PN Junction Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 69A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 53mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 357W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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