P3M173K0F3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1700V 1.97A TO-220F-
$5.08
Available to order
Reference Price (USD)
1+
$5.08000
500+
$5.0292
1000+
$4.9784
1500+
$4.9276
2000+
$4.8768
2500+
$4.826
Exquisite packaging
Discount
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Optimize your power electronics with the P3M173K0F3 single MOSFET from PN Junction Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the P3M173K0F3 combines cutting-edge technology with PN Junction Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 1.97A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 0.25A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 1.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 19W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-2L
- Package / Case: TO-220F-2
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