PBHV8110DH-AU_R1_000A1
Panjit International Inc.
Panjit International Inc.
TRANS NPN 100V 1A SOT89
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the PBHV8110DH-AU_R1_000A1 Bipolar Junction Transistor (BJT) from Panjit International Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBHV8110DH-AU_R1_000A1 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Panjit International Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
- Power - Max: 1.4 W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
Related Products
Microchip Technology
2N5733
Infineon Technologies
BCW61E6384HTMA1
Microchip Technology
JAN2N3637UB
Microchip Technology
2N2432AUB
Comchip Technology
ABC807-40-HF
Microchip Technology
2N2780
Microchip Technology
JANSM2N5151
onsemi
2SB1120G-TD-E
Microchip Technology
HS2222A/TR
Microchip Technology