PBSS302PD,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 40V 4A 6TSOP
$0.58
Available to order
Reference Price (USD)
3,000+
$0.17050
6,000+
$0.15950
15,000+
$0.15400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PBSS302PD,115 Bipolar Junction Transistor (BJT) from Nexperia USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PBSS302PD,115 is a reliable component for demanding applications. Nexperia USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 2A, 2V
- Power - Max: 1.1 W
- Frequency - Transition: 110MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
Related Products
Harris Corporation
2N3393
onsemi
2N3906TF
onsemi
BC638G
Microchip Technology
2N3743U4
onsemi
2SB1234-TB-E
Diodes Incorporated
MMSTA06-7-F
Nexperia USA Inc.
PMBTA64,215
Micro Commercial Co
BCX53-TP
onsemi
MJ15025G
onsemi