PBSS3515E,115
NXP USA Inc.
NXP USA Inc.
TRANS PNP 15V 0.5A SC75
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the PBSS3515E,115 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PBSS3515E,115 delivers superior performance in diverse environments. NXP USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
- Power - Max: 250 mW
- Frequency - Transition: 280MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
Related Products
Fairchild Semiconductor
KSH340TF
Diotec Semiconductor
BCX53-16
Panjit International Inc.
BC849CW_R1_00001
Central Semiconductor Corp
2N2905A PBFREE
Panjit International Inc.
BC857B-AU_R1_000A1
Fairchild Semiconductor
FPN660A
Diodes Incorporated
BC847AQ-7-F
onsemi
D44H8G
Rohm Semiconductor
2SAR573D3TL1
onsemi