PBSS3540E,115
NXP USA Inc.
NXP USA Inc.
TRANS PNP 40V 0.5A SC75
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
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Upgrade your electronic designs with the PBSS3540E,115 Bipolar Junction Transistor (BJT) by NXP USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the PBSS3540E,115 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NXP USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
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