PBSS4112PAN,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2NPN 120V 1A 6HUSON
$0.50
Available to order
Reference Price (USD)
3,000+
$0.17640
6,000+
$0.16660
15,000+
$0.16170
Exquisite packaging
Discount
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Meet the PBSS4112PAN,115 Nexperia USA Inc. s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the PBSS4112PAN,115 demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
- Power - Max: 510mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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