PBSS4120T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 20V 1A TO236AB
$0.43
Available to order
Reference Price (USD)
3,000+
$0.10250
6,000+
$0.09750
15,000+
$0.09000
30,000+
$0.08500
75,000+
$0.08250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the PBSS4120T,215 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PBSS4120T,215 delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
- Power - Max: 480 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Infineon Technologies
BCP5416E6327HTSA1
Fairchild Semiconductor
TIP32BTU
Panjit International Inc.
BC847B_R1_00001
Diotec Semiconductor
BC857BW
Central Semiconductor Corp
2N3391A PBFREE
Diodes Incorporated
ZTX457STZ
Micro Commercial Co
BCP54-16-TP
Nexperia USA Inc.
PBSS5240XX
Diodes Incorporated
ZTX751STZ
Central Semiconductor Corp