PBSS4130QAZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS4130QA - 30 V, 1 A
$0.06
Available to order
Reference Price (USD)
5,000+
$0.09282
Exquisite packaging
Discount
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Enhance your circuit designs with the PBSS4130QAZ Bipolar Junction Transistor (BJT) from NXP Semiconductors. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBSS4130QAZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP Semiconductors to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 245mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 190MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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