PBSS4140V,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN 40V 1A SOT666
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the PBSS4140V,115 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBSS4140V,115 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Diodes Incorporated
BCP55TA
onsemi
BC856BWT1
onsemi
KSC1008CYTA
onsemi
NJVMJD32CG
onsemi
BUB323ZT4G
onsemi
2SB1201S-TL-E
Fairchild Semiconductor
2N5088
Nexperia USA Inc.
BF820W,115
onsemi
NSV12100XV6T1G
NTE Electronics, Inc