PBSS4160PANPSX
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN/PNP 60V 1A DFN2020D-6
$0.55
Available to order
Reference Price (USD)
3,000+
$0.19692
6,000+
$0.18598
15,000+
$0.18051
Exquisite packaging
Discount
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The PBSS4160PANPSX BJT Array from Nexperia USA Inc. brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The PBSS4160PANPSX undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA, 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
- Power - Max: 370mW
- Frequency - Transition: 175MHz, 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: DFN2020D-6
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