PBSS4230QAZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PBSS4230QA - 30V, 2A NP
$0.07
Available to order
Reference Price (USD)
5,000+
$0.10160
Exquisite packaging
Discount
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The PBSS4230QAZ Bipolar Junction Transistor (BJT) from NXP Semiconductors is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the PBSS4230QAZ is a reliable component for demanding applications. NXP Semiconductors's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 190MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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