PBSS4260QAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN 60V 2A DFN1010D-3
$0.37
Available to order
Reference Price (USD)
5,000+
$0.10160
10,000+
$0.09378
25,000+
$0.08857
50,000+
$0.08597
Exquisite packaging
Discount
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Upgrade your electronic designs with the PBSS4260QAZ Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the PBSS4260QAZ is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Nexperia USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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