PBSS5112PAP,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2PNP 120V 1A 6HUSON
$0.57
Available to order
Reference Price (USD)
3,000+
$0.17640
6,000+
$0.16660
15,000+
$0.16170
Exquisite packaging
Discount
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Engineered for reliability, the PBSS5112PAP,115 BJT Array from Nexperia USA Inc. delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The PBSS5112PAP,115 shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 480mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 2V
- Power - Max: 510mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
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Nexperia USA Inc.