PBSS5160T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
$0.45
Available to order
Reference Price (USD)
3,000+
$0.09430
6,000+
$0.08970
15,000+
$0.08280
30,000+
$0.07820
75,000+
$0.07590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the PBSS5160T,215 Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the PBSS5160T,215 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
- Power - Max: 400 mW
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Microchip Technology
JANS2N2369AUB/TR
onsemi
BCP56-10T3G
Nexperia USA Inc.
BC857W,135
onsemi
NSVBC817-16LT1G
NTE Electronics, Inc
NTE342
Fairchild Semiconductor
MPSA05RA
Nexperia USA Inc.
BC846AQCZ
Diodes Incorporated
FZT749TA
Nexperia USA Inc.
PMST4401,135
Rohm Semiconductor