PBSS5260QAZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 60V 1.7A DFN1010D-3
$0.37
Available to order
Reference Price (USD)
5,000+
$0.08857
10,000+
$0.08076
25,000+
$0.07555
50,000+
$0.07294
Exquisite packaging
Discount
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Upgrade your electronic designs with the PBSS5260QAZ Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the PBSS5260QAZ is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Nexperia USA Inc. for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.7 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
- Power - Max: 325 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1010D-3
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