PBSS5330XZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 30V 3A SOT89
$0.13
Available to order
Reference Price (USD)
1,000+
$0.12505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the PBSS5330XZ Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBSS5330XZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 2V
- Power - Max: 550 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
Related Products
onsemi
2SC3917-AC
Nexperia USA Inc.
PBSS5350D,125
Nexperia USA Inc.
BCX55-16,115
NTE Electronics, Inc
NTE2351
Microchip Technology
JANKCB2N2222A
onsemi
2SD1815T-TL-E
onsemi
MJL0302A
Sanken
2SD1796
Sanken
2SB1647
STMicroelectronics