PBSS5350T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 50V 2A TO236AB
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09430
6,000+
$0.08970
15,000+
$0.08280
30,000+
$0.07820
75,000+
$0.07590
Exquisite packaging
Discount
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Optimize your electronic systems with the PBSS5350T,215 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PBSS5350T,215 delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 540 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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