PBSS5480X,135
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 80V 4A SOT89
$0.44
Available to order
Reference Price (USD)
4,000+
$0.23400
8,000+
$0.22100
12,000+
$0.21450
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the PBSS5480X,135 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the PBSS5480X,135 delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 380mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
- Power - Max: 1.6 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
Related Products
Diodes Incorporated
DXT5551P5-13
NTE Electronics, Inc
NTE290AMCP
STMicroelectronics
ST13007D
NXP USA Inc.
BFR505215
Rohm Semiconductor
2SB1707TL
Infineon Technologies
BFN38H6327XTSA1
Microchip Technology
2N5153
Microchip Technology
2N2907AUB/TR
onsemi
KSA1013OBU
Nexperia USA Inc.